74V1G07-741G07
SINGLE BUFFER (OPEN DRAIN)
n HIGH SPEED: tPD =3.7ns (TYP.) at VCC = 5V
n LOW POWER DISSIPATION:ICC = 1mA(MAX.) at TA=25°C
n HIGH NOISE IMMUNITY:VNIH =VNIL = 28% VCC (MIN.)
n POWER DOWNPROTECTION ON INPUT
n OPERATING VOLTAGE RANGE:VCC(OPR) = 2V to 5.5V
n IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 2 stages including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.