M29F002BT,M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
n SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
n ACCESS TIME: 45ns
n PROGRAMMING TIME
– 8ms by Byte typical
n 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
n PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
n ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
n UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
n TEMPORARY BLOCK UNPROTECTION MODE
n LOW POWER CONSUMPTION
– Standby and Automatic Standby
n 100,000 PROGRAM/ERASE CYCLES per BLOCK
n 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
n ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– M29F002BT Device Code: B0h
– M29F002BNT Device Code: B0h
– M29F002BB Device Code: 34h